| PART |
Description |
Maker |
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| SST39VF400A SST39VF400A-45-4C-B3K SST39VF400A-45-4 |
8 Mbit multi-purpose flash
4 Mbit multi-purpose flash
2 Mbit multi-purpose flash
2 MBIT / 4 MBIT / 8 MBIT ( X 16 ) MULTI - PURPOSE FLASH
(SST39xF200A/400A/800A) 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
SST[Silicon Storage Technology, Inc]
SST[Silicon Storage Technology Inc]
|
| NB7L216MNEVB |
2.5 V / 3.3 V, 12Gb/s Multi Level Clock/Data Input to RSECL, High Gain Receiver/Buffer/Translator with Internal Termination
|
ON Semiconductor
|
| SST39WF1601 SST39WF1601-90-4C-B3QE SST39WF1601-90- |
16 MBIT (X16) MULTI-PURPOSE FLASH PLUS
The SST39WF1601 is a 1M x16 CMOS Multi-Purpose Flash Plus (MPF ) manufactured with SST’s proprietary
|
SST[Silicon Storage Technology, Inc]
Silicon Storage Technology, Inc.
|
| TDA8580J |
Multi-purpose power amplifier
|
NXP Semiconductors
|
| AD600AR-REEL AD600AR-REEL7 AD600JR-REEL AD600JR-RE |
Gain range:0 to 40dB ; -7.5V; 600mW; daual, low noise, wideband variable gain amplifier. For ultrasound and sonar time-gain control, high performance audio and RF AGC systems and signal measurement
|
Analog Devices
|
| ISL6558CB- ISL6558CR ISL6558IB ISL6558IB- ISL6558I |
Multi-Purpose Precision Multi-Phase PWM Controller With Optional Active Voltage Positioning
|
INTERSIL[Intersil Corporation]
|
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| LD7202W LD7202 LD7202A LD7202B LD7202L |
14 GHz, 600 W CW, PPM FOCUSING, HIGH POWER GAIN 14千兆赫，600 W连续，分之为重点，高功率增益
14 GHz / 600 W CW / PPM FOCUSING / HIGH POWER GAIN
|
NEC Corp.
NEC, Corp.
NEC[NEC]
|
| SST39LF010-45-4C-B3HE SST39VF010-45-4C-B3KE SST39L |
512K X 8 FLASH 2.7V PROM, 70 ns, PBGA48
512K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
128K X 8 FLASH 2.7V PROM, 70 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 3V PROM, 45 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 3V PROM, 45 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 3V PROM, 55 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 3V PROM, 55 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 55 ns, PQCC32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 55 ns, PDSO32
64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 45 ns, PBGA48
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
Microchip Technology, Inc.
Microchip Technology Inc.
Silicon Storage Technol...
|
| SST39LF100-70-4I-WI SST39LF100-70-4I-WK SST39VF100 |
Eight Char 5.0 mm (0.2 inch) Glass/Ceramic Smart 5 x 7 Alphanumeric Displays for Military Apps 1兆位4K的16）多功能闪光
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
(SST39VF100 / SST39LF100) 1 Mbit (64K x16) Multi-Purpose Flash
8 mm (0.31 inch) Ultra Mini Seven Segment Display
|
http://
Silicon Storage Technology, Inc.
|
